CURRENT TRANSFER MECHANISM IN HETEROSTRUCTURES nGe-p(Ge2)1-x-y(GaAs)х(ZnSe)у
Abstract
Epitaxial layers (Ge2)1-x-y(GaAs)х(ZnSe)у grown on germanium substrates attract researchers as a new semiconductor material, and the structures derived from them are theoretical and practical interest for the micro - and optoelectronics.
We have studied the solid solutions (Ge2)1-x-y(GaAs)х(ZnSe)у grown by liquid phase epitaxy from a limited volume bismuth molten solution in an atmosphere of purified hydrogen palladium. The substrate was Ge washer with diameter 20 mm and thickness 350 microns, with the crystallographic orientation (111) n - type conductivity and with resistivity 1 ohm∙cm. Epitaxial layers were p - type conductivity and thickness of the layers was 20 microns.
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